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US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Vertical phase change switch utilizing a thermally conductive sidewall dielectric for high-efficiency heating" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,678, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Vertical phase change switch util... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Vertical phase change switch utilizing a thermally conductive sidewall dielectric for high-efficiency heating" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,678, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Vertical phase change switch util... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Deposition equipment with adjustable temperature source" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,679, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Deposition equipment with adj... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Deposition equipment with adjustable temperature source" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,679, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Deposition equipment with adj... Read More


US Patent Issued to SUMCO on April 14 for "Method for manufacturing group III nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,680, issued on April 14, was assigned to SUMCO Corp. (Tokyo). "Method for manufacturing group III nitride semiconductor substrate" was inv... Read More


US Patent Issued to SUMCO on April 14 for "Method for manufacturing group III nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,680, issued on April 14, was assigned to SUMCO Corp. (Tokyo). "Method for manufacturing group III nitride semiconductor substrate" was inv... Read More


US Patent Issued to SK hynix, INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION on April 14 for "Thin film deposition method and manufacturing method of electronic device applying the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,681, issued on April 14, was assigned to SK hynix Inc. (Incheon, South Korea) and INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATIO... Read More


US Patent Issued to Tokyo Electron on April 14 for "Methods for patterning a semiconductor substrate using metalate salt ionic liquid crystals" (Texas Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,682, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods for patterning a semiconductor substrate using metalate sal... Read More


US Patent Issued to FENG CHIA UNIVERSITY, DAH YOUNG VACUUM EQUIPMENT on April 14 for "Semiconductor processing equipment part and method for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,683, issued on April 14, was assigned to FENG CHIA UNIVERSITY (Taichung, Taiwan) and DAH YOUNG VACUUM EQUIPMENT Co. LTD. (Taichung City, Ta... Read More


US Patent Issued to ASM IP Holding on April 14 for "Method and system for mitigating underlayer damage during formation of patterned structures" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,684, issued on April 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method and system for mitigating underlayer damage du... Read More